Academic record:

B. SC (Physics Hons.): University of Calcutta
B.Tech (Radio Physics and electronics): University of Calcutta
M. Tech (VLSI design): University of Calcutta
Ph.D: University of Calcutta

Journal papers:

S. Tewari, A. Biswas, and A. Mallik, “Study of InGaAs InGaAs-channel
channel MOSFETs for analog/mixed-signal signal system system-on-chip applications,”IEEE IEEE Electron Device Lett., Lett vol. 33, no.3,
pp. 372-374, 374, March 2012. (Impact factor = 3.03).

S. Tewari, A. Biswas, and A. Mallik, “Impact of different barrier layers and Indium content of the channel on the analog performance of InGaAsMOSFETs,” InGaAsMOSFETs,”IEEE IEEE Trans. Electron
Devices,vol. vol. 60, no.5, pp.1584 pp.1584-1589, May 2013 (Impact Impact factor = 2.358).

S. Tewari, A. Biswas, and A. Mallik, “ “Investigation Investigation on High Performance CMOS With p-p Geand n-InGaAs InGaAs MOSFETs for Logic Applications, ”IEEE IEEE Trans. NanoTechnology,vol. NanoTechnology, 14, no.2, pp.275-281, 281, March 2015 (Impact factor = 1.619).