University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

MnNiSi-based compounds exhibit giant isothermal magnetic entropy change (ΔSM) across their induced first-order coupled magnetostructural transition (MST) in the vicinity of room temperature, though in most of the cases, the use of Maxwell relation from a very frequently used but incorrect measurement protocol provides a nonphysical spike to the calculated ΔSM. Herein, to realize the accurate measurement protocol, we explore magnetocaloric properties of a (FeCoGa)x doped (MnNiSi)1-x compound with x = 0.165 rigorously. Several methods, including the estimation of ΔSM using Maxwell relation, Clausius-Clapeyron equation, and also from the calorimetry measurement, are discussed explicitly. The studied material is observed to show a MST at 265 K and a giant ΔSM as large as about -29.3 J kg-1 K-1 due to a magnetic field change of 5 T following the Maxwell equation during discontinuous cooling and field increasing mode, which enables the material as a promising candidate for magnetic refrigeration. © 2021 Author(s).

World University root node

Electronic Science

Applied Physics Letters

Measurement protocols dependent giant magnetocaloric effect in MnNiSi-based system

Recent researches are mostly focused on technology scaling as well as device size minimization design techniques following Moore's law. Conventional computing architectures are unable to fulfill modern application demands. Memristor is a promising alternative device which has been developed by many researchers [2] to draw attention of its structure for numerous applications which includes computational logic, memory implementations and neuromorphic systems. This paper emphasizes the basic properties of memristor at the device level. Different digital circuits have been designed for logic operations and DSP applications. Design methodologies are developed for proper circuit design, and circuit parameters are taken from a very detailed device model and optimization techniques. The transient response of Hybrid CMOS-memristor based logic gates and different adder circuits (i.e, half adder, full adder, carry-save adder) and multiplier circuit are performed in Cadence 180nm technology. © 2019 IEEE.

Proceedings of 2nd International Conference on Innovations in Electronics, Signal Processing and Communication, IESC 2019

Design of Memristor-CMOS based logic gates and logic circuits

We investigate the effect of Kerr nonlinearity on the angle of beam divergence of single-mode trapezoidal index fibers from its linear and nonlinear values. From comparison of angle of beam divergence in presence and absence of Kerr nonlinearity, the nonlinear effect for each aspect ratio is observed to be more profound in lower values of normalized frequency. Moreover, the triangular index profile supersedes the other index profiles in respect of relative change of angle of beam divergence. It should give the system users and developers a much better control over far-field related calculations and can be widely used for experiments in presence of optical nonlinearity. © 2018 Elsevier GmbH

GENERAL

Optik

Nonlinear effects in aspect ratio based far-field characterization of single-mode trapezoidal index fibers

We present simple and complete empirical relations to predict the angle of beam divergence in terms of normalized frequency and aspect ratio of a single-mode trapezoidal index fiber. This is done for the far-field characterization over a long range of normalized frequencies without the calculation of normalized spot sizes. On comparison, we observe an excellent match of our results with exact values establishing the validity of our formulation. The formulation should attract attention as a simple alternative to the rigorous methods of estimating the angle of beam divergence for such fibers. It can be widely used by system users and developers for much better control over far-field related calculations and experiments. © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).

Optical Engineering

Aspect ratio-based formulation for far-field characterization of single-mode trapezoidal index fibers

This work presents the comparative performance analysis of Ge2Sb2Te5 (GST) and Ge1Cu2Te3 (GCT) based phase change memory materials with ring-shaped confined chalcogenide (RCC) cell structure. Three-dimensional finite element simulation with rotational symmetry is used to analyze the electro-thermal process within the RCC cell during phase change operation. The RCC cell structures show superior performance in terms of power consumption required for phase change as compared to other reported PCRAM structures. The results indicate that during the transition from low to high resistance, GCT cell shows superior performance compared to GST cell with power consumption of 1.62 mW and 2.83 mW, respectively. Also, 42.75% reduction in power consumption has been observed in the proposed GCT cell. The GCT based RCC cell requires a relatively lower voltage of 1.75 V for phase transition in comparison to 2.55 V in a GST RCC cell of similar dimension. © 2017 Elsevier Ltd

Materials Today Communications

A comparative study on the performance of RESET based electro-thermal process in ring shaped confined Ge 2 Sb 2 Te 5 and Ge 1 Cu 2 Te 3 chalcogenide memory structures