Educational Qualification :

Ph.D. (Tech.) - Dept. of Radio Physics & Electronics, University of Calcutta

M.Tech. in VLSI Design - Dept. of Radio Physics & Electronics, University of Calcutta

B.Tech. in ECE - West Bengal University of Technology

Award Received :
1. First-Class First in M.Tech. (2-year VLSI Design) in 2009 from University of Calcutta (CU).
2. Enjoyed CSIR (HRDG, Govt. of India)-fellowship award from 25/04/2012 to 31/10/2013.

Publications :

A. Chattopadhyay and A. Mallik, “Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor,” IEEE Trans. Electron Devices, vol. 58, no. 3, pp. 677-683, Mar. 2011.

A. Mallik and A. Chattopadhyay, “Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the Channel,” IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4250-4257, Dec. 2011.

A. Mallik and A. Chattopadhyay, “The Impact of Fringing Field on the Device Performance of a P-Channel Tunnel Field-Effect Transistor with a High-κ Gate Dielectric,” IEEE Trans. Electron Devices, vol. 59, no. 2, pp. 277-282, Feb. 2012.

A. Mallik and A. Chattopadhyay, “Tunnel Field-Effect Transistors for Analog/Mixed-Signal System-on-Chip Applications”, IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 888-894, Aprl. 2012.