Academic qualification:

Ph. D. (Semiconductor Physics, Devices and Circuits), Department of Radio Physics and Electronics, University of Calcutta, INDIA (2005)

B. Tech. and M. Tech. in Radio Physics and Electronics, University of Calcutta, INDIA

Teaching Experiences:
(i) Worked as a Lecturer in Jadavpur University during 1997-1999 and in University of Calcutta during 1999-2003.
(ii) Worked as a Senior Lecturer in University of Calcutta during 2003-2006.
(iii) Worked as a Reader in Jadavpur University during 2006-2008.
(iv) Worked as a Reader in University of Calcutta during 2008-2009.
(v) Worked as an Associate Professor in University of Calcutta during 2009-2012.
(vi) Working as a Professor in University of Calcutta since 2012 –till date.

Worked as Reviewer in the following Journals:

(a) IEEE Electron. Device Lett.
(b) IEEE Trans. Electron Devices
(c) IEEE Journal of Quantum Electronics
(d) IEEE Trans. Nanotechnology
(e) Superlattices and Microstructures
(f) Optics & Laser Technology
(g) Microelectronics Reliability (Elsevier)
(h) Materials Science in Semiconductor Processing (Elsevier)
(i) Microsystem Technologies (Springer)
(j) IET Circuits, Devices and Systems
(k) Journal of Optical Communications
(i) Semiconductor Science and Technology

List of Publications

1. S. De, S. Tewari, and A. Biswas, “Negative bias temperature instability (NBTI) effects onp-Si/n-InGaAs hybrid CMOSFETs for digital applications,” Microsystem Technologies,2019. (Accepted)

2. S. Bhattacherjee and A. Biswas, “Investigation on noise performance of InAs x Sb 1-xMOSFETs with compositional variations,” Microsystem Technologies, 2019. (Accepted)

3. S. Dasgupta, C. Mondal and A Biswas, “Role of grooving angle of 14-nm-InAs channelquantum well MOSFETs for improvement of analog/RF and linearity performance,” IETCircuits, Devices and Systems, 2019. (Accepted)

4. S. De, S. Tewari, A. Biswas and A. Mallik, “Improved digital performance of hybridCMOS inverter with Si p-MOSFET and InGaAs n-MOSFET in the nanometer regime,”Microelectronic Engineering, Vol. 211, pp. 18-25, 2019.