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Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y in calculating minimum capacitance in C-V plot of MIS structure
S K PAUL, P K BASU
Published in -
1993
Volume: 36
   
Issue: 7
Pages: 985 - 988
Abstract
Empirical expressions for the composition and temperature dependence of intrinsic carrier densities in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y are developed. The value is then used to compute the minimum capacitance in AlSi3N4Si1-xGex MIS structures and good agreement is obtained with the experimental data. The expected values of minium capacitance for MIS diodes made of the other two materials are given. © 1993.
About the journal
JournalSolid State Electronics
Publisher-
ISSN0038-1101