Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y in calculating minimum capacitance in C-V plot of MIS structure

S K PAUL; P K BASU

doi:10.1016/0038-1101(93)90115-7

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Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y in calculating minimum capacitance in C-V plot of MIS structure

S K PAUL, P K BASU

Published in -

1993

DOI: 10.1016/0038-1101(93)90115-7

Volume: 36

Issue: 7

Pages: 985 - 988

Abstract

Empirical expressions for the composition and temperature dependence of intrinsic carrier densities in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y are developed. The value is then used to compute the minimum capacitance in AlSi3N4Si1-xGex MIS structures and good agreement is obtained with the experimental data. The expected values of minium capacitance for MIS diodes made of the other two materials are given. © 1993.

Topics: Capacitance (51)%

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Journal	Solid State Electronics
Publisher	-
ISSN	0038-1101

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