Header menu link for other important links
X
Unified model for electrical and optical characteristics of a transistor laser with InGaAs quantum well and dot in GaAs base
R BASU, , P K BASU
Published in -
2011
Abstract
A synthesis is made of the optical model for a quantum well (QW) and a quantum dot (QD) laser using Fermi golden rule and the electrical model based on continuity equation for a Transistor Laser. The calculated values of threshold base current and light power for InGaAs QW embedded in GaAs base agree with the experimental value. The predicted threshold base current for Quantum Dots is an order of magnitude lower. © 2011 IEEE.
About the journal
Journal2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011
Publisher-
Open AccessNo