Header menu link for other important links
X
Transport properties of In0.53Ga0.47As layers grown from Er containing melts
S DHAR, SHAMPA PAUL
Published in Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
2000
Volume: 3975
   
Abstract
Net donor and acceptor concentrations in InGaAs layers grown by liquid phase epitaxy from melts containing 0.1-0.18 wt% are estimated by fitting theoretically calculated temperature-dependent mobility with experimental data. Donors are reduced more drastically compared to the acceptors due to the impurity gettering action of Er and the grown layers turn out to be heavily compensated. The 77 K mobility do not increase much inspite of a very low free carrier concentration in the layers.
About the journal
JournalProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
ISSN0277-786X