Header menu link for other important links
X
Transport of nitrogen atoms during liquid phase epitaxial growth of InAsN and GaAsN
S C DAS, S DHAR
Published in IOP PUBLISHING LTD
2011
Volume: 26
   
Issue: 8
Abstract
We have used a one-dimensional diffusion model to investigate the transport of nitrogen during a liquid phase epitaxial growth of InAsN layers from Bi and In solvents and GaAsN layers from Ga solvent. The concentration profile of nitrogen near the growing interface has been obtained for the materials for different melt supercooling and cooling rates. Experimental results on the growth of InAsN layers from Bi solutions using the optimum growth parameters suggested by the study are shown. © 2011 IOP Publishing Ltd.
About the journal
JournalData powered by TypesetSemiconductor Science and Technology
PublisherData powered by TypesetIOP PUBLISHING LTD
ISSN0268-1242