We have used a one-dimensional diffusion model to investigate the transport of nitrogen during a liquid phase epitaxial growth of InAsN layers from Bi and In solvents and GaAsN layers from Ga solvent. The concentration profile of nitrogen near the growing interface has been obtained for the materials for different melt supercooling and cooling rates. Experimental results on the growth of InAsN layers from Bi solutions using the optimum growth parameters suggested by the study are shown. © 2011 IOP Publishing Ltd.

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University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Transport of nitrogen atoms during liquid phase epitaxial growth of InAsN and GaAsN

Semiconductor Science and Technology

Bi containing III–V compound semiconductors have become important in the last few years for many potential device applications. Molecular beam epitaxy and metalorganic vapor phase epitaxy techniques have mostly been used for the growth of these compounds. We review here the application of the simple liquid phase epitaxy (LPE) technique for the growth of some members of the III–V-Bi series. Due to the restrictions of limited solubility of Bi in III–V solids, use of LPE has so far been limited to the growth of InSbBi and GaSbBi. We describe here details of the growth procedure and the characterization of these two ternaries by different groups with special emphasis on the structural, luminescence, and band gap reduction properties. Theoretical model based on diffusion of Bi across an LPE growth model is described with a view to optimize the growth parameters. Reference is also made to the melt growth of bulk crystals of these compounds and to the LPE growth of InPBi and InAsSbBi epitaxial layers.

Journal	Data powered by TypesetSemiconductor Science and Technology
Publisher	Data powered by TypesetIOP PUBLISHING LTD
ISSN	0268-1242