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The impact of a high-κ gate dielectric on a p-channel tunnel field-effect transistor
Published in SPIE
Volume: 8549
In this paper, the impact of varying the dielectric constant of the gate dielectric on the device performance of a double gate p-channel tunnel field-effect transistor (p-TFET) is reported for the first time. It is observed that fringing field arising out of a high-κ gate dielectric degrades the device performance of a p-TFET, which is in contrast with its nchannel counterpart, where the same been reported to yield better performance. Also, the impact of fringing field is found to be larger for a p-TFET with higher source doping. © 2012 SPIE.
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JournalData powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
PublisherData powered by TypesetSPIE