In this paper, the impact of varying the dielectric constant of the gate dielectric on the device performance of a double gate p-channel tunnel field-effect transistor (p-TFET) is reported for the first time. It is observed that fringing field arising out of a high-κ gate dielectric degrades the device performance of a p-TFET, which is in contrast with its nchannel counterpart, where the same been reported to yield better performance. Also, the impact of fringing field is found to be larger for a p-TFET with higher source doping. © 2012 SPIE.

AVIK CHATTOPADHYAY

Radio Physics and Electronics

ABHIJIT MALLICK

Electronic Science

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

The impact of a high-κ gate dielectric on a p-channel tunnel field- effect transistor

Proceedings of SPIE - The International Society for Optical Engineering

A tunnel field-effect transistor (TFET) for which the device operation is based upon a band-to-band tunneling mechanism is very attractive for low-power ultralarge-scale integration circuits. A detailed investigation, with the help of extensive device simulations, of the effects of a spacer dielectric on the device performance of a TFET is reported in this paper. The effects of varying the dielectric constant and width of the spacer are studied. It is observed that the use of a low-κ dielectric as a spacer causes an improvement in its on-state current. The device performance is degraded with an increase in the spacer width until a certain value (∼30 nm); after which, the dependence becomes very weak. The effects of varying the source doping concentration as well as the gate overlap/underlap are also investigated. Higher source doping or a gatesource overlap reduces the spacer dependence of the device characteristics. A gate underlap structure, however, shows an improved performance for a high-κ spacer. For a given spacer, although a gate overlap or a relatively large gate underlap degrades the device performance, a small gate underlap shows an improvement in it. © 2011 IEEE.

IEEE Transactions on Electron Devices

Impact of a spacer dielectric and a gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor

Applied Physics Letters

Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric

Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- $kappa$ Gate Dielectrics

Japanese Journal of Applied Physics

Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+Layer

Electronics Letters

Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high-K gate dielectrics

The impact of a high-Îº gate dielectric on a p-channel tunnel field-effect transistor

Journal	Data powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
Publisher	Data powered by TypesetSPIE
ISSN	0277-786X