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The effect of dopant distribution and built-in electric field on the transit time of a transistor
N K D CHOWDHURY, F GHOSH, T B BISWAS
Published in -
1980
Volume: 23
   
Issue: 3
Pages: 293 - 295
Abstract
[No abstract available]
About the journal
JournalSolid State Electronics
Publisher-
ISSN0038-1101