Transient photoconductivity studies have been carried out between 125-293 K on Zn-annealed p-ZnTe single crystals using a contactless r.f. technique with 532 nm laser pulse excitation. The samples had resistivity of 13.7 ohm-cm with hole concentration 8.42 × 1015/cm3 at 300 K. The decay was characterized by 2 decay times. The faster decay was found to increase from 1 × 10-6 s at 125 K to reach a maximum of 23 × 10-6 s at 250 K and then decrease to 20 × 10-6 s at 293 K. The decay times observed are attributed to carrier excitation from and trapping due to a shallow donor level at ∼0.04 eV. When the excitation wavelength was varied from 532 nm to 592 nm, both the signal amplitude and the decay times increased, with surface effects being dominant at shorter wavelengths. The results are compared with steady-state photoconductivity measurements. © 2006 IACS.