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Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction
N. Shaw, , G. Sen
Published in Springer
2020
Volume: 19
   
Issue: 4
Pages: 1433 - 1443
Abstract
A strained Ge1−x−ySixSny/Ge1−a−bSiaSnb direct type II staggered heterojunction n-channel tunneling field-effect transistor (FET) with a dual-material double gate is proposed herein. A high-K gate dielectric is used to improve the overall device performance. The energy bandgap for strained Ge1−x−ySixSny grown on a relaxed Ge1−a−bSiaSnb layer is determined using the generalized approach of Menendez and Kouvetakis (MK). Poisson’s equation is solved by using a parabolic approximation to determine the surface potential and electric field. The drain current is calculated using the tunneling generation rate obtained from Kane’s model. A significant improvement of the drain current is observed as compared with that of previously reported Si-based TFETs. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
About the journal
JournalData powered by TypesetJournal of Computational Electronics
PublisherData powered by TypesetSpringer
ISSN15698025