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Study of Si-Ge-Sn based Heterobipolar Phototransistor (HPT) exploiting Quantum Confined Stark Effect and Franz Keldysh effect with and without resonant cavity
S. Ghosh, , G. Sen, P.K. Basu
Published in Elsevier B.V.
2019
Volume: 106
   
Pages: 62 - 67
Abstract
We have studied the performance of a Quantum Confined Stark Effect (QCSE) dominated resonant cavity enhanced (RCE) Heterobipolar Phototransistor (HPT) using an absorption layer of Ge0.992Sn0.008 QW with Si0.3Ge0.61Sn0.09 barrier between base and collector. Further the QW is replaced by bulk GeSn so that Franz-Keldysh Effect (FKE) becomes predominant. Main analysis was concentrated on finding the Quantum Efficiency (QE), Responsivity of RCE-HPT. Finally the Optical gain, Gain-Bandwidth product are estimated and compared with the structure without resonant cavity. © 2018
About the journal
JournalData powered by TypesetPhysica E: Low-Dimensional Systems and Nanostructures
PublisherData powered by TypesetElsevier B.V.
ISSN13869477