A model for studying the characteristics of heavily doped n+-GaAs/n-Ge heterojunction structures is developed through the use of a Poisson-Boltzmann integral equation. The equation is used to investigate the nature of variation of conduction band/Fermi level separation with depth. The changes of carrier concentration with depth are also computed.

S S DE

A K GHOSH

T K PATTANAYAK

M BERA

J C HALDAR

A K HAJRA

S GUHA

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Physica Status Solidi (A) Applied Research

Solid-State Electronics

Semiconductor heterojunction topics: Introduction and overview

The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C–V profiling through isotype heterojunctions

IEE Proceedings I Solid State and Electron Devices

Simulation and measurement of c/v doping profiles in multilayer structures

Transport equations for the analysis of heavily doped semiconductor devices

Applied Physics Letters

Measurement of isotype heterojunction barriers byC‐Vprofiling

Studies on some characteristics of heavily doped n+ - GaAs/n-Ge heterojunction structures

Journal	Data powered by TypesetPhysica Status Solidi (A) Applied Research
Publisher	Data powered by TypesetWiley-VCH Verlag
ISSN	0031-8965