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Studies on some characteristics of heavily doped n+ - GaAs/n-Ge heterojunction structures
S S DE, A K GHOSH, T K PATTANAYAK, M BERA, J C HALDAR, A K HAJRA, S GUHA
Published in Wiley-VCH Verlag
1996
Volume: 155

Issue: 1
Pages: 279 - 285
Abstract
A model for studying the characteristics of heavily doped n+-GaAs/n-Ge heterojunction structures is developed through the use of a Poisson-Boltzmann integral equation. The equation is used to investigate the nature of variation of conduction band/Fermi level separation with depth. The changes of carrier concentration with depth are also computed.