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Studies on some characteristics of heavily doped n+ - GaAs/n-Ge heterojunction structures
S S DE, A K GHOSH, T K PATTANAYAK, M BERA, J C HALDAR, A K HAJRA, S GUHA
Published in Wiley-VCH Verlag
1996
Volume: 155
   
Issue: 1
Pages: 279 - 285
Abstract
A model for studying the characteristics of heavily doped n+-GaAs/n-Ge heterojunction structures is developed through the use of a Poisson-Boltzmann integral equation. The equation is used to investigate the nature of variation of conduction band/Fermi level separation with depth. The changes of carrier concentration with depth are also computed.
About the journal
JournalData powered by TypesetPhysica Status Solidi (A) Applied Research
PublisherData powered by TypesetWiley-VCH Verlag
ISSN0031-8965