An attempt is made to study the shift of the avalanche transit time (ATT) phase delay and the modulation of the high frequency properties of single drift indium phosphide ATT diodes at 94 and 140 GHz window frequencies due to optical illumination. The study is based on a numerical simulation of the negative specific resistance profiles and the conductance-susceptance characteristics of the diode for different hole and electron current multiplication factors. The results indicate that the predominant hole photocurrent has a more pronounced effect in the 94 GHz diode as compared to the 140 GHz diode as regards the shift of avalanche phase delay, frequency chirping, narrowing of the avalanche zone, and decrease of the total negative resistance per unit area of the device.

J P BANERJEE

R MUKHERJEE

J MUKHOPADHYAY

P N MALLIK

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Physica Status Solidi (A) Applied Research

Computer studies are carried out on the effect of electron and hole reverse saturation currents on i) the negative resistance profiles, ii) the admittance characteristics, and iii) device quality factor (Q) of silicon n+pp+ and GaAs p+nn+ IMPATTs operating in the Ku‐band frequencies. The results show that the diode negative resistance decreases first appreciably and then increases again in the case of GaAs p+nn+ diode with the increase of electron reverse saturation current i.e., with the decrease in electron multiplication factor. In the case of silicon n+pp+ diode, the negative resistance increases first and then starts decreasing with the lowering of the hole multiplication factor. It is further observed that for both, Si and GaAs diodes the frequency of operation shifts upwards and the device Q factor increases gradually while the device negative conductance decreases with increasing reverse saturation current. Copyright © 1989 WILEY‐VCH Verlag GmbH &amp; Co. KGaA

physica status solidi (a)

Variation of high frequency negative resistance of silicon N+pp+ and GaAs p+nn+ IMPATT diodes with enhancement of reverse saturation current

The effect of mobile space charge on avalanche zone width and conversion efficiency of single drift region (SDR) indium phosphide impatts at 12 and 60 GHz has been investigated. The results show that p+nn+ InP diodes have a narrower avalanche zone and a higher conversion efficiency compared to n+pp+ diodes for both the frequencies at normal operating current densities. The expansion of avalanche zone and efficiency degradation at high current levels are more pronounced in p+nn+ at 12 GHz and in n+pp+ at 60 GHz. © 1984 Springer-Verlag.

Applied Physics A Solids and Surfaces

Computer studies on the space charge dependence of avalanche zone width and conversion efficiency, of single drift p+nn+ and n+pp+ indium phosphide impatts

IEEE Transactions on Microwave Theory and Techniques

Optical control of microwave semiconductor devices

Electronics Letters

Single-drift flat-profile GaAs impatt diodes at 90 GHz

IEE Proceedings J Optoelectronics

Optical control of W-band impatt oscillators

Studies on avalanche phase delay and the admittance of an optically illuminated indium phosphide avalanche transit time diode at millimeter wave window frequencies

Journal	Data powered by TypesetPhysica Status Solidi (A) Applied Research
Publisher	Data powered by TypesetWiley-VCH Verlag
ISSN	0031-8965