Bi2Te3+x% Graphite nanocomposite samples were synthesized by ball milling method. Structural characterizations are carried out at room temperature using X-Ray Diffraction (XRD) technique. Lattice strain, as calculated from the XRD data, increases with increasing graphite content. Thermal variation of resistivity data, measured down to 10K, shows that all the nanocomposite samples are semiconducting in nature. Activation energy of the samples estimated from the resistivity data, increases with increasing graphite concentration. © 2017 Author(s).

ARITRA BANERJEE

Physics

SUDIPTA BANDYOPADHYAY

P SINGHA

S DAS

A K DEB

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Structural and resistive property study of Bi2Te3+x% graphite nanocomposites

AIP Conference Proceedings

Polycrystalline Sb2Te3-xSex (0.0 ≤ x ≤)samples were synthesized by the solid-state reaction method. The structural analysis showed that up to the maximal concentration of Se, the samples possess rhombohedral crystal symmetry (space group R3¯m). The increase of Se content increases the resistivity of the samples. The variation of phonon frequencies, observed from the Raman spectroscopic study, depicts an anomalous behaviour around x = 0.2. The sample Sb2Te2.8Se0.2 also shows maximum Seebeck coefficient, carrier concentration and thermoelectric power factor. The nature of the scattering mechanism controlling the thermopower data has been explored. The thermoelectric properties of the synthesized materials have been analyzed theoretically in the frame of the Boltzmann equation approach. © EPLA, 2016.

Fulltext

Tuning of thermoelectric properties with changing Se content in Sb2Te3

Structural and thermoelectric properties of metallic and semiconducting Sb2Te3 are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample has higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb2Te3 hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower, and power factor. Thermopower data indicate p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity in Sb2Te3. Role of different scattering mechanism on the thermoelectric property of Sb2Te3 is discussed. © 2015 AIP Publishing LLC.

Journal of Applied Physics

Defect induced structural and thermoelectric properties of Sb2Te3 alloy

Journal of Alloys and Compounds

Nanoscale thermoelectric properties of Bi2Te3 – Graphene nanocomposites: Conducting atomic force, scanning thermal and kelvin probe microscopy studies

EPL (Europhysics Letters)

Bi
                    2
                    Te
                    3−x
                    Se
                    x
                    series studied by resistivity and thermopower

Carbon

The influence of CNTs on the thermoelectric properties of a CNT/Bi2Te3 composite

Structural and resistive property study of Bi 2 Te 3 +x% graphite nanocomposites

Journal	Data powered by TypesetAIP Conference Proceedings
Publisher	Data powered by TypesetAmerican Institute of Physics Inc.
ISSN	0094-243X