Computer studies are carried out on the mobile space charge dependence of breakdown voltage, avalanchezone width, avalanche resonance frequency, and negative resistance of a single drift region (SDR) p+nn+ Si IMPATT diode designed for operation in the X, Ku, and K frequency bands, i.e., 8 to 26 GHz. The doping profile of the diode is optimised by varying the diffusion length, i.e., time and temperature of diffusion, so that the device may provide maximum output power and efficiency. The results show that the dc and high frequency properties of SDR Si IMPATT diodes are modified by the mobile space charge at high current density, but the space charge dependence of the above properties becomes considerable at lower dc current density for SDR diodes compared to their double drift region (DDR) counterparts. Copyright © 1994 WILEY‐VCH Verlag GmbH &amp; Co. KGaA

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J P BANERJEE

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University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

physica status solidi (a)

Solid-State Electronics

Effect of mobile space-charge on the small-signal admittance of DDR silicon IMPATTs at high current densities

A computer study of the field and current profiles of silicon X-band symmetrical d.d.r. impatt diodes is presented. The results show that there is considerable widening of the avalanche zone at high values of current density. This causes a sharp fall in the efficiency of the device at high current density after reaching a maximum. © 1978, The Institution of Electrical Engineers. All rights reserved.

Electronics Letters

Computer studies on the widening of the avalanche zone and the decrease in efficiency of silicon x-band symmetrical double-drift impatt diodes at high current densities

Electron and hole ionization rates in epitaxial silicon at high electric fields

Journal of Physics and Chemistry of Solids

Drift velocity of electrons and holes and associated anisotropic effects in silicon

IEEE Transactions on Electron Devices

A small-signal theory of avalanche noise in IMPATT diodes

Space charge dependence of negative resistance, avalanche layer width, and avalanche resonance frequency of SDR p+ nn+ Si IMPATT diodes with optimised doping profile

Journal	physica status solidi (a)
Publisher	-
ISSN	0031-8965