In this work, process induced strain has been incorporated selectively into Si-substrate by growing TiO2 nano-islands on it using vapour-liquid-solid method and the induced strain has been retained by chemically removing the TiO2 nano-islands. The retained strain is quantified by employing pole study method of the electron backscatter diffraction (EBSD) and compared with the similar results obtained from micro-Raman measurements. A very good agreement between the results indicates accuracy of the developed pole study analyses. Both the methods suggest that such a low-cost approach is capable of incorporating and retaining a compressive strain >4.7% along(100) and tensile strain >1.3% along (010) and (001) directions by growing the crystalline TiO2 nano-islands on Si substrates followed by their chemical removal. © 2017 IOP Publishing Ltd.