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Reply to the “comments on -a theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application”
S DUTTA
Published in Academic Press
2018
Volume: 123
   
Pages: 458 - 459
Abstract
In this paper, a reply to a to a recent article entitled “Comments on A-theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application” is given which opines that the functional form of built-in-potential of a metal-semiconductor junction is considered erroneously in the original publication. On the contrary to the comment, this article justifies the original work with suitable logic and supportive references. © 2017 Elsevier Ltd
About the journal
JournalSuperlattices and Microstructures
PublisherAcademic Press
ISSN0749-6036