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Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
J GOSWAMI, S BANERJEE, J P BANERJEE
2015
Volume: 14

Issue: 1
Pages: 309 - 320
Abstract
The authors have developed a quantum corrected drift-diffusion model for impact avalanche transit time (IMPATT) devices by coupling the density gradient model with the classical drift-diffusion model. A large-signal simulation technique has been developed by incorporating the quantum potentials in the current density equations for the analysis of double-drift region IMPATT devices based on different semiconductors such as Wurtzite–GaN, InP, type-IIb diamond (C), 4H–SiC and Si deigned to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies. It is observed that, the RF power output and DC to RF conversion efficiency of the devices operating at higher mm-wave ($$>$$>140 GHz) and THz frequencies reduce due to the incorporation of quantum corrections in the model; but the effect of quantum corrections are negligible for the devices operating at lower mm-wave frequencies ($$\le$$≤140 GHz). © 2014, Springer Science+Business Media New York.