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Proposal of the possible method to define the threshold voltage of lateral tunnel field-effect transistors
Y MORI, S SATO, Y OMURA, A MALLIK
Published in Kansai University
2017
   
Issue: 59
Pages: 75 - 81
Abstract
This paper proposes a semi-empirical method to define the threshold voltage of lateral tunnel field-effect transistors. The method well estimates the threshold condition with high universality given practical bias conditions and device parameters. Device simulations demonstrate that the threshold condition has been physically elucidated. © 2017, Kansai University. All rights reserved.
About the journal
JournalTechnology Reports of Kansai University
PublisherKansai University
ISSN0453-2198