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Polar optical phonon scattering limited free carrier absorption in semiconductors with ellipsoidal energy band structure
A K DAS, B R NAG
Published in -
1975
Volume: 36
   
Issue: 9
Pages: 945 - 947
Abstract
A formula is derived for the calculation of free carrier absorption in semiconductors with ellipsoidal energy band structure, including the effects of electron screening, when the dominant scattering mechanism is due to polar modes. Computational results are also presented which show that the magnitude of the FCA is significantly affected by the mass anisotropy coefficient. © 1975.
About the journal
JournalJournal of Physics and Chemistry of Solids
Publisher-
ISSN0022-3697