The mobility of a two-dimensional electron gas (2DEG) in a rectangular potential well formed in a AlGaAs/GaAs/AlGaAs structure scattered by polar-optic phonon is calculated by an iterative solution of Boltzmann equation. The values are significantly different from those calculated by using a relaxation time. The polar-optic mobility is found to dominate over acoustic mobility over a temperature range of 100-300 K when the well thickness is about 10 nm. The mobility values for 2DEG are, however, found to be lower than the bulk values. © 1981.

J B ROY

P K BASU

B R NAG

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Polar optic phonon scattering of two dimensional electron gas in a rectangular potential well

Solid State Communications

We have calculated the mobility of two-dimensionally free excitons in a quantum well by considering various scattering processes. The relaxation times are derived by using a variational wave function for the 1s exciton in the lowest subband in an infinitely deep well. The calculated mobilities for the GaAs well at first increase with temperature due to the predominance of the interface-roughness scattering, then attain a peak, and finally decrease with temperature as the deformation-potential scattering dominates. The piezoelectric scattering has less importance. The calculated values agree with the experimental data for 8- and 15-nm-wide wells up to about 150 K; however, the disagreement between the values for a 4-nm-wide well indicates that the effect of a finite barrier should be considered. The polar-optic-phonon scattering has been included to explain the rapid decrease of the experimental data above 150 K; however, the single-subband approximation gives too high a value for the mobility, while the values for bulk excitons are quite low compared to the experimental data. © 1991 The American Physical Society.

Physical Review B

Calculation of the mobility of two-dimensional excitons in a GaAs/AlxGa1-xAs quantum well

Experimental results on low-field and high-field electron transport in rectangular quantum wells are reviewed. The related theory is presented and the experimental results are examined in the light of the theory. It is concluded that although some experimental results are available and the theory of transport has been developed, numerical agreement between theory and experiments has not yet been reached. © 1986 the Indian Academy of Sciences.

Pramana

Electron transport in rectangular quantum wells

The theory of mobility of a two-dimentional electron gas in JFET structures limited by polar-optic phonon and impurity scattering is developed in this work. The energy level and the wave function of the lowest subband are obtained by a variational procedure. The mobility limited by polar-optic phonon scattering is obtained by solving the Boltzmann equation iteratively. The expression for the impurity scattering limited mobility is obtained by using the variational wave function. For numerical calculation, however, the electron gas is assumed to be strictly two-dimensional. It is found that for experimental range of impurity concentration in GaAs JFETs, impurity scattering is the dominant process even at 300K. © 1983.

Journal	Solid State Communications
Publisher	-
ISSN	0038-1098