Header menu link for other important links
Physical mechanisms of short-channel effects of lateral double-gate tunnel FET
Published in Institute of Electrical and Electronics Engineers Inc.
Pages: 34 - 35
This paper discusses the mechanisms that may underlie the short-channel effects of the lateral double-gate tunnel FET. Simulations suggest that the short-channel effect of the threshold voltage is triggered by degradation in the electrostatic integrity of the gate field. © 2017 IEEE.