A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode (UTC-PD) is developed in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width is derived from the model which shows good agreement with the experimental results. The bandwidth of the device is estimated from time dependent photocurrent response. © 2015 IEEE.

ABHIRUP BARMAN

Radio Physics and Electronics

S KHANRA

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

An electrical equivalent circuit model of InGaAs/InP uni-travelling carrier photodiode (UTC-PD) is presented. The model is suitable to be built on any electrical circuit simulator to optimize the design parameters of the device. Its performance in terms of bandwidth, linearity, third order inter-modulation distortion and output photo current are investigated. Simulation techniques to measure inter-modulation distortion products and linearity are given in detail. The result obtained by the modeling technique is validated through a comparison with the reported experimental results. It is shown that 3 dB cutoff frequency and output photocurrent can be substantially improved by inserting a small inductance in series with the load together with choosing an optimum absorption layer width in UTC-PD. This technique does not sacrifice the device linearity to a large extent. © 2014, Springer Science+Business Media New York.

Optical and Quantum Electronics

Circuit model of uni-traveling carrier photodiode with high power and enhanced bandwidth technique

IEEE Photonics Technology Letters

High-Power High-Linearity Uni-Traveling-Carrier Photodiodes for Analog Photonic Links

Encyclopedia of Modern Optics

OPTICAL AMPLIFIERS | Semiconductor Optical Amplifiers

IEEE Journal of Selected Topics in Quantum Electronics

High-Speed and High-Output InP–InGaAs Unitraveling-Carrier Photodiodes

Applied Physics Letters

Empirical approximations for the Fermi energy in a semiconductor with parabolic bands

Photoresponse characteristics from computationally efficient dynamic model of uni-traveling carrier photodiode

Journal	Data powered by TypesetProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Publisher	Data powered by TypesetIEEE Computer Society
ISSN	2158-3234
Open Access	No