CulnSe2 films with different Cu/In ratios (0.4-1.2) were deposited on glass substrates by three source evaporation techniques. The films were polycrystalline in nature with partially depleted grains. Photoconductivity in the films was measured in the temperature range 170-370 K. The data at low temperatures (T < 300 K) were analyzed by using the grain boundary trapping model with monovalent trapping states. The intercrystalline barrier height in dark varied within 0.13 and 0.08 eV with the variation of Cu/In within 0.4 and 1.18. The variation of the barrier height with the intensity of the incident photons in the range 10-75 mW / cm2 was analyzed to understand the carrier detrapping effect in the films under various illumination levels. © 1994.