We have estimated the values of the mobility of electrons in GeSn alloy for Sn composition x > 0.08 for which the material shows direct bandgap. For Γ and L valleys, acoustic and intervalley phonon scattering, as well as alloy scattering are considered. The calculated values are one order of magnitude higher than in pure Ge. The effects of uncertainties in parameter values are discussed. © 2015 IEEE.

BRATATI MUKHOPADHYAY

Radio Physics and Electronics

P K BASU

R BASU

S MUKHOPADHYAY

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Phonon and alloy scattering limited electron mobility of direct gap Ge 1−x Sn x alloys

2015 6th International Conference on Computers and Devices for Communication, CODEC 2015

Silicon Photonics: Fundamentals and Devices

Semiconductor Laser Theory

Nature Photonics

Lasing in direct-bandgap GeSn alloy grown on Si

IEEE Journal of Quantum Electronics

Strain-Balanced ${m Ge}_{z}{m Sn}_{1-z}hbox{--}{m Si}_{x}{m Ge}_{y}{m Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

Journal of Applied Physics

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Phonon and alloy scattering limited electron mobility of direct gap Ge1-x Snx alloys

Journal	Data powered by Typeset2015 6th International Conference on Computers and Devices for Communication, CODEC 2015
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open Access	No