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Phonon and alloy scattering limited electron mobility of direct gap Ge1-x Snx alloys
, P K BASU, R BASU, S MUKHOPADHYAY
Published in Institute of Electrical and Electronics Engineers Inc.
2017
Pages: 1 - 4
Abstract
We have estimated the values of the mobility of electrons in GeSn alloy for Sn composition x > 0.08 for which the material shows direct bandgap. For Γ and L valleys, acoustic and intervalley phonon scattering, as well as alloy scattering are considered. The calculated values are one order of magnitude higher than in pure Ge. The effects of uncertainties in parameter values are discussed. © 2015 IEEE.