In the present work, the authors report the fabrication of p-CuO/n-ZnO heterojunction grown on (100) n-Si substrate. The CuO thin film has been grown by employing vapour-liquid-solid (VLS) technique and the n-ZnO nanowires are grown by chemical bath deposition (CBD) method. The optoelectronic and the photovoltaic properties of the fabricated devices have been investigated. The heterojunction exhibits a photocurrent of 0.25μA under UV illumination of 13mW/cm 2 at 365 nm. An open circuit voltage of 20mV, short-circuit current density of 7.7mA/cm 2 and a fill factor of 23.3% is obtained from the heterojunction. The overall power conversion efficiency is 0.3%. © 2015 IEEE.