A N CHAKRAVARTI

A K CHOWDHURY

K P GHATAK

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

physica status solidi (a)

An attempt is made to derive an expression for the electronic heat capacity in heavily‐doped semiconductors having Gaussian band‐tails. With the help of this expression, the electronic heat capacity is studied as a function of the electron concentration corresponding to different temperatures, taking heavily‐doped n‐GaAs having Gaussian band‐tails as an example. It is concluded that the nature of the dependence is determined exclusively by the movement of the Fermi level with changing electron concentration through the allowed energy states. Copyright © 1982 WILEY‐VCH Verlag GmbH & Co. KGaA

physica status solidi (b)

Effect of Heavy Doping on the Electronic Heat Capacity in Semiconductors

An attempt is made to investigate the effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors having n-channel inversion layers under the weak electric-field limit. It is found, taking n-channel InSb as an example, that both the MOS and surface capacitances show spiky oscillations with changing magnetic field. It is further observed that the sharpness and the depths of the spikes increase with increasing magnetic field whereas the depths are found to decrease with increasing thickness of the insulating layer. © 1980 Springer-Verlag.

Applied Physics

Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors

Effect of magnetic quantization on the surface capacitance of MOS fieldâ€effect devices

Physical Review B

Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors

Measurements of the Surface Quantization in Siliconn- andp-Type Inversion Layers at Temperatures above 25 K

Oscillatory electronic heat capacity in inversion layers on ã€ˆ100ã€‰ oriented pâ€type Si in a quantizing magnetic field

Journal	physica status solidi (a)
Publisher	-
ISSN	0031-8965