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Articles
On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacerPublished in
2022
Volume: 37
Issue: 4
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About the journal
| Journal | Semiconductor Science and Technology |
|---|
Authors (1)
ABHIJIT MALLICK- A surface potential based subthreshold drain current model for short-channel MOS transistors
- A possible threshold voltage definition of lateral tunnel FET
- A two-dimensional surface potential based subthreshold-slope model for short-channel MOS transistors
- Impact of different barrier layers and indium content of the channel on the analog performance of InGaAs MOSFETs
