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On the Einstein Relation in n‐Channel Inversion Layers on Ternary Semiconductors under Magnetic Quantization
Published in -
Volume: 148
Issue: 2
Pages: 645 - 652
An attempt is made to investigate the Einstein relation for the diffusivity–mobility ratio of the carriers in n‐channel inversion layers on ternary semiconductors in the presence of a quantizing magnetic field, on the basis of the fourth order in effective mass theory and taking into account the interactions of the conduction, heavy‐hole, light‐hole and split‐off bands, without any approximations of weak or strong electric field limits and incorporating the influences of electron spin and Dingle temperature, respectively. It is found, taking n‐channel inversion layers on Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence and the oscillatory spikes are much sharper with large numerical magnitudes even in the presence of broadening in inversion layers. The nature of oscillation is quite different to those obtained for bulk specimen of the same material under magnetic quantization. In addition, the corresponding well‐known results for isotropic parabolic energy bands form the special cases of the generalized expressions. Copyright © 1988 WILEY‐VCH Verlag GmbH & Co. KGaA
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Journalphysica status solidi (b)