We present a simple analysis of the carrier contribution to the elastic constants in ultrathin films of Bi under magnetic quantization in accordance with McClure- Choi, Cohen, Abrikosov, Lax and parabolic ellipsoidal band models in the presence of spin, broadening and temperature respectively. It appears that the said contribution increases with increasing electron concentration and decreasing film thickness in various manners. The McClure and Choi model shows this more significantly than other models. We have also suggested an experimental method of determining the said contribution in degenerate materials having arbitrary dispersion laws.

K P GHATAK

B NAG

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

On the carrier contribution to the elastic constants in ultrathin films of bismuth under quantizing magnetic field

Nanostructured Materials

In this paper, an attempt is made to investigate the influence of quantizing magnetic field on the Fowler-Nordheim field emission (FNFE) from non-linear optical materials by formulating the respective electron dispersion laws under magnetic quantization by considering the influence of the energy band constants in each case on the basis of the k.p formalism. It has been observed, taking n-CdGeAs2 as example that the field emitted current density oscillates with the inverse quantizing magnetic field due to SdH effect. The FNFE is a product of two functions inside the summation sign and both of them are functions of Fermi energy, effective mass and various system constants in a complex way. If the rate of increase of first function overcomes the rate of change of the second one, the FNFE will increase, whereas, for the opposite case, the FNFE will decrease where the rates of variations totally depend on the specific dispersion relation of the particular quantized structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the FNFE and the electron statistics in the absence of quantizing magnetic field and thus confirming the compatibility test. The results of this paper find three applications in the field of quantized materials. © 2014 American Scientific Publishers.

Journal of Computational and Theoretical Nanoscience

Analysis of magneto fowler-nordheim field emission from semiconductor nanostructures of non-linear optoelectronic materials

In this paper we study the effective electron mass (EEM) in Nano wires (NWs) of nonlinear optical materials on the basis of newly formulated electron dispersion relation by considering all types of anisotropies of the energy band constants within the framework of k . p formalism. The results for NWs of III-V, ternary and quaternary semiconductors form special cases of our generalized analysis. We have also investigated the EEM in NWs of Bi, IV-VI, stressed Kane type materials, Ge, GaSb and Bi2Te3 by formulating the appropriate 1D dispersion law in each case by considering the influence of energy band constants in the respective cases. It has been found that the 1D EEM in nonlinear optical materials depend on the size quantum numbers and Fermi energy due to the anisotropic spin orbit splitting constant and the crystal field splitting respectively. The 1D EEM is Bi, IV-VI, stressed Kane type semiconductors and Ge also depends on both the Fermi energy and the size quantum numbers which are the characteristic features of such NWs. The EEM increases with increase in concentration and decreasing film thickness and for ternary and quaternary compounds the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test.

Simple theoretical analysis of the effective electron mass in semiconductor nanowires

In this paper, an attempt is made to study the effective electron mass (EEM) in Quantum wires (QWs) of III-V, ternary and quaternary materials on the basis of three and two band models of Kane within the framework of kp formalism. It has been found, taking QWs of InAs, InSb, GaAs, Hg1-xCdxTe and In1-xGaxAs1-yPy that the 1D EEM increases with electron concentration per unit length and decreases with increasing film thickness respectively. For ternary and quaternary materials the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the 1-D materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test. The results of this paper find two applications in the fields of nanoscience and technology. Copyright © 2012 American Scientific Publishers All rights reserved.

Journal of Nanoscience and Nanotechnology

Effective electron mass in quantum wires of III-V, ternary and quaternary materials

An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures. © 2011 Elsevier Ltd. All rights reserved.

Superlattices and Microstructures

On the two dimensional effective electron mass in quantum wells, inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k·p formalism. The results of quantum confined III-V compounds form the special cases of our generalized analysis. The TPM has also been studied for quantum confined II-VI, stressed materials, bismuth and carbon nanotubes (CNs) on the basis of respective dispersion relations. It is found taking quantum confined CdGeAs2, InAs, InSb, CdS, stressed n-InSb and Bi that the TPM increases with increasing film thickness and decreasing electron statistics exhibiting quantized nature for all types of quantum confinement. The TPM in CNs exhibits oscillatory dependence with increasing carrier concentration and the signature of the entirely different types of quantum systems are evident from the plots. Besides, under certain special conditions, all the results for all the materials gets simplified to the well-known expression of the TPM for non-degenerate materials having parabolic energy bands, leading to the compatibility test. © 2009 Elsevier B.V. All rights reserved.

Physica B: Condensed Matter

Thermoelectric power in ultrathin films, quantum wires and carbon nanotubes under classically large magnetic field: Simplified theory and relative comparison

Journal	Data powered by TypesetNanostructured Materials
Publisher	Data powered by TypesetElsevier Sci Ltd, Exeter
ISSN	0965-9773