A N CHAKRAVARTI

D P PARUI

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

physica status solidi (a)

In this paper an attempt is made to study the Einstein relation for the diffusivity-mobility ratio (DMR) in nonlinear optical compounds on the basis of a newly formulated electron energy spectrum taking into account the combined influences of the anisotropies in the effective electron mass and the spin orbit splitting constant together with the inclusion of crystal field splitting in the Hamiltonian within the framework of k.p formalism. The corresponding results for III-V, ternary and quaternary types of optoelectronic materials form a special case of our generalized analysis. We have also studied the DMR in II-VI, Bi, IV-VI and stressed materials on the basis of various band models as applicable for such specialized materials. It has been found taking n-Cd3As2, n-CdGeAs2, n-InAs, n-InSb, n-Hg1-xCdxTe and n-In1-xGaxAsyP1-y lattice matched to InP, CdS, Bi, PbS, PbTe, PbSe and stressed InSb as examples of the aforementioned compounds that the DMR increases with increasing electron concentration in various manners and the rate of increase is greatly influenced by the presence of the different energy band constants of the said materials together with the fact that the rates of variation are totally band structure dependent. An experimental method of determining the DMR in degenerate samples having arbitrary dispersion laws has been suggested and the present simplified analysis is in agreement with the suggested relationship. In addition, the well-known results for nondegenerate wide gap materials have been obtained as special cases of our generalized theory under certain limiting conditions. © 2006 Elsevier B.V. All rights reserved.

Physica B: Condensed Matter

The Einstein relation for the diffusivity-mobility ratio in nonlinear optical, optoelectronic and the related materials

On the modification of the generalized Einstein relation for degenerate semiconductors in the presence of band tails at very low temperatures

Generalized einstein relation for semiconductors in the presence of a magnetic field

Pragmatik

On Non-Truth Conditional Meaning

Proceedings of the IEEE

Generalized Einstein relation for degenerate semiconductors

A correction on the use of the Einstein relation in degenerate semiconductors

The Einstein relationship and Boltzmann boundary conditions in degenerate semiconductors

On some approximations of the generalized Einstein relation for degenerate semiconductors

Journal	physica status solidi (a)
Publisher	-
ISSN	0031-8965