PROJNAN CHATTOPADHYAY

Electronic Science

B RAYCHAUDHURI

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

New technique for the determination of series resistance of Schottky barrier diodes

Solid State Electronics

The capacitance-voltage characteristics of an anisotype heterojunction have been studied considering the presence of interface states and series resistance. The dependence of the above characteristics on the interface state density, doping concentration, temperature and series resistance has been evaluated. It is shown that the functional dependence of the device capacitance is generally determined by the surface potentials on the two sides of the junction. The value of the diffusion potential obtained under the limiting case of low interface state density and series resistance has been found about 0.1 V less compared to the experimental result of Unlu et al.. This discrepancy can possibly be attributed to the effect of frequency on the device capacitance.

Applied Surface Science

Capacitance-voltage characteristic of anisotype heterojunction in the presence of interface states and series resistance

The electrical characteristics of Schottky barrier diodes were studied considering the effect of shunt resistance. Both the DC and the AC behaviour of the device were investigated. It was found that the shunt resistance has a remarkable effect at low bias in contrast to the series resistance which influences the electrical characteristics at large bias. The standard evaluation techniques based on the DC characteristics are found to be inaccurate in the presence of the shunt resistance. Also, the AC conductance and capacitance of the device are significantly influenced, making our previously developed model limited in the presence of a shunt resistance. The well-known conductance and capacitance techniques for the characterization of these devices seem to be inapplicable at low bias because of the above-mentioned parasitic effect.

Journal of Physics D: Applied Physics

The effect of shunt resistance on the electrical characteristics of Schottky barrier diodes

The capacitance of a Schottky barrier diode is evaluated considering the effects of deep-level impurities and the series resistance of the device. Because of the series resistance, the forward capacitance-voltage characteristics of the diode exhibit a peak. It is found that deep levels have a significant effect on the capacitance peak. The capacitance peak increases with increasing density of deep levels and decreasing value of the activation energy of the levels. © 1995.

Capacitance-voltage characteristics of Schottky barrier diode in the presence of deep-level impurities and series resistance

The experimental energy distribution of the interface state charge density in Cu-nSi diodes is obtained from the current-voltage characteristics using a modified technique which considers the effect of series resistance. The energy distribution of the interface state charge density is found to be linear over a bias voltage range of 0.1 to 0.3 V. © 1994.

Energy distribution of interface state charge density in Cu-nSi Schottky diode with thin interfacial oxide layer

physica status solidi (a)

Effect of energy distribution of interface states on the capacitance and conductance of Schottky barrier and MIS tunnel contacts

Solid-State Electronics

On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode

Journal of Applied Physics

Forward I‐V plot for nonideal Schottky diodes with high series resistance

IEEE Transactions on Electron Devices

An improved forward I-V method for nonideal Schottky diodes with high series resistance

A modified forward I‐V plot for Schottky diodes with high series resistance

Journal	Solid State Electronics
Publisher	-
ISSN	0038-1101
Open Access	No