A 1D binary periodicstructure with defect has been analysed using Transfer Matrix Method. For a particular nine layered structure of SiO2 and InP, a number of full stop bands (in other words, zero passbands or forbidden bands) at different regions of the spectrum under investigation are observed. Introducing a central spatial defect in the system by adjusting the layer width, it is possible to achieve an extremely narrow passband centred on 1554.9 nm in the 7th forbidden band. Moreover by varying the defect width, the number of passbands can be increased. These passbands have flat and 100% stopband and hence can be better candidate to drop single or multiple frequencies in WDM systems. It is further observed that with increase in the number of layers and/or defect width, the number of mini pass bands outside the original forbidden band also increases. Also by FDTD simulation it is seen that the field is localised within the defect for the passband frequency. © 2012 Elsevier B.V. All rights reserved.