As we all know that, the performance and characteristics of any semiconductor device are effected by change in operating temperature. The temperature dependencies of the transport properties of InAIN/(AlNN)-N-14-N-15 have been investigated using theoretical and mathematical study. Here we have considered the (AlNN)-N-14-N-15 with different ratio of N-14 and N-15 for the analysis owing to considerable interest in superlattice structures of large band gap semiconductors having various favourable material properties such as very high thermal conductivity, high carrier mobility and wide bandwidth operation. This paper deals with analysis of temperature effect on some of the device modelling parameters like carrier mobility and scattering. (C) 2017 Elsevier Ltd. All rights reserved.

KAUSHIK MAZUMDAR

RAJEEV KUMAR RANJAN

RAVI SHANKAR

BINDU PRIYADARSHINI

ANIRUDDHA GHOSAL

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Superlattices and Microstructures

This advance research analysis presents several transport properties of InAlN/AlN superlattice MOSFET by considering 14N and 15N isotopes. Since the performance of a specific semiconductor device is uniquely dependent on the vital features like scattering, mobility, temperature, conductivity etc. These all characteristics decides the overall enactment and functioning of the devices. Subsequently relaxation time have been obtained for investigating the carrier mobility and drain current. The temperature dependencies of the current flowing through the MOSFET and also the drain current versus drain voltage characteristics of InAlN/Al14N15N superlattice MOSFET have been deliberated. This investigation deals with the modelling of semiconductor device having very high drain current and conductivity. © 2017 Elsevier Ltd

Design and investigation of InAlN/Al14N15N superlattice MOSFET

There has been considerable interest in superlattice structures of large band gap semiconductors like AlGaN/GaN based arrangements due to its measured parameter and favorable material properties, such as high electron mobility and very high thermal conductivity. Hence, an understanding of the electron transport in GaN has always been prioritized to improve the GaN semiconductors based devices. Here the transport properties of electron in isotopically mixed Ga14N15N alloy channels have been studied. Different ratio of isotopes has been considered and their effect on the alloy scattering phenomenon of specimen is studied. © 2016

Analysis of electron transport in AlGaN/GaN superlattice HEMTs for isotopes 14N and 15N

In present analysis initially authors have studied the variation of mobility with lattice temperature in Nitride based superlattice MOSFETs and have compared the results with temperature dependent measured mobility of two dimensional electrons in AlGaN/GaN superlattice structure. Based on these mobilities a superlattice MOSFET is designed in which static characteristics following different scattering mechanisms are discussed. © 2016

Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET

Study of the carrier transport in presence of backscattering in InAs nanowire based MOSFET after GaN

European Journal of Chemistry

Spectroscopic and biological activity studies on tridentate Schiff base ligands and their transition metal complexes

Journal of Applied Physics

High temperature electron transport properties in AlGaN/GaN heterostructures

Modern comparative approach for carrier transport in InA1N/A1N superlattice device with characteristics and modelling using nitride (N-14,N-15) isotopes

Journal	Data powered by TypesetSuperlattices and Microstructures
Publisher	Data powered by TypesetACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
ISSN	0749-6036