As we all know that, the performance and characteristics of any semiconductor device are effected by change in operating temperature. The temperature dependencies of the transport properties of InAIN/(AlNN)-N-14-N-15 have been investigated using theoretical and mathematical study. Here we have considered the (AlNN)-N-14-N-15 with different ratio of N-14 and N-15 for the analysis owing to considerable interest in superlattice structures of large band gap semiconductors having various favourable material properties such as very high thermal conductivity, high carrier mobility and wide bandwidth operation. This paper deals with analysis of temperature effect on some of the device modelling parameters like carrier mobility and scattering. (C) 2017 Elsevier Ltd. All rights reserved.