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Modern comparative approach for carrier transport in InA1N/A1N superlattice device with characteristics and modelling using nitride (N-14,N-15) isotopes
KAUSHIK MAZUMDAR, RAJEEV KUMAR RANJAN, RAVI SHANKAR, BINDU PRIYADARSHINI, ANIRUDDHA GHOSAL
Published in ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
2017
Volume: 103
   
Pages: 190 - 194
Abstract
As we all know that, the performance and characteristics of any semiconductor device are effected by change in operating temperature. The temperature dependencies of the transport properties of InAIN/(AlNN)-N-14-N-15 have been investigated using theoretical and mathematical study. Here we have considered the (AlNN)-N-14-N-15 with different ratio of N-14 and N-15 for the analysis owing to considerable interest in superlattice structures of large band gap semiconductors having various favourable material properties such as very high thermal conductivity, high carrier mobility and wide bandwidth operation. This paper deals with analysis of temperature effect on some of the device modelling parameters like carrier mobility and scattering. (C) 2017 Elsevier Ltd. All rights reserved.
About the journal
JournalData powered by TypesetSuperlattices and Microstructures
PublisherData powered by TypesetACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
ISSN0749-6036