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Modelling of a Forward‐Biased High‐Low Junction
S S DE, A K GHOSH, T K PATTANAYAK, J C HALDAR
Published in -
1993
Volume: 135
   
Issue: 1
Pages: 215 - 221
Abstract
A model is presented to investigate the variation of majority carrier density as a function of position for a forward‐biased high—low junction. The model is developed in order to obtain a new approximate analytical solution of Poisson's equation for such a junction with a sufficiently large doping difference between the two sides. A comparison of the present work with that of previous work is made through graphical analysis. Copyright © 1993 WILEY‐VCH Verlag GmbH & Co. KGaA
About the journal
Journalphysica status solidi (a)
Publisher-
ISSN0031-8965