In the current work, the contribution of gate oxide/channel interface roughness has been estimated and incorporated into the transport models of a Si nanowire field-effect-transistor (Si NWFET). This has been incorporated by modifying the relevant energy sub-bands taking into account the roughness in both transverse and longitudinal directions. Accordingly, the channel Hamiltonian matrix elements related to energy sub-bands are modified. It has been observed from the study that such interface roughness has significant effect on the device performance in terms of transfer and output characteristics. The transfer characteristics show that the current decreases up to 40% for an increase in interface roughness up to 25%. © 2012 IEEE.

SANATAN CHATTOPADHYAY

Electronic Science

B N CHOWDHURY

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Modeling of transport behavior of the ballistic Silicon nanowire gate-all-around field-effect-transistors (Si NWFETs) with Si/SiO 2 interface roughness

CODEC 2012 - 5th International Conference on Computers and Devices for Communication

This article studies the impact of doping dependent carrier effective masses of the source/drain regions on transport properties of Si-nanowire field effect transistors within ballistic limit. The difference of carrier effective mass in channel and that in the source/drain regions leads to a misalignment of respective sub-bands and forms non-ideal contacts. Such non-idealities are incorporated by modifying the relevant self-energies which control the effective electronic transport from source to drain through the channel. Non-ideality also arises in the nature of local density of states in the channel due to sub-band misalignment, resulting to a reduction of drain current by almost 50%. The highest values of drain current, leakage current, and their ratio are obtained for the S/D doping concentrations of 3 × 1020 cm -3, 8 × 1020 cm-3, and 2 × 10 20 cm-3, respectively, for the nanowire of length 10nm and diameter of 3nm. Interestingly, the maximum of sub-threshold swing, minimum of threshold voltage, and the maximum of leakage current are observed to be apparent at the same doping concentration. © 2014 AIP Publishing LLC.

Fulltext

Journal of Applied Physics

Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect- transistors

2009 International Semiconductor Device Research Symposium

The ITRS metrology roadmap

IEEE Transactions on Electron Devices

Toward Nanowire Electronics

Bandstructure Effects in Silicon Nanowire Electron Transport

Applied Physics Letters

Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations

Modeling of transport behavior of the ballistic Silicon nanowire gate-all-around field-effect-transistors (Si NWFETs) with Si/SiO2 interface roughness

Journal	CODEC 2012 - 5th International Conference on Computers and Devices for Communication
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