We have explored the possibility of using Transistor Laser as an Optical Amplifier in addition to its normal function as an electronic amplifier. The steady state gain is calculated by assuming different InGaAs Quantum Well thickness within the GaAs base of fixed width thereby changing the capture rate and confinement factor. Clear gin saturation effect is exhibited. Using ODE solver, the gain saturation as a function of time is demonstrated. The linewidth enhancement factor of the amplifier is also evaluated. ©2009 IEEE.