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Mobility of electrons in Hg1-xCdxTe
Published in AMER INST PHYSICS
1974
Volume: 45
   
Issue: 3
Pages: 1463 - 1465
Abstract
Electron mobility in semiconducting Hg1-xCdxTe at room temperature has been calculated in the range 0.2 ≤ x ≤ 1.0 by an iterative solution of the Boltzmann equation incorporating the two-mode nature of the polar optical scattering and the nonparabolicity of the conduction band. The effects of the deformation potential acoustic, ionized impurity, and electron-hole scattering have also been considered. The calculated results agree with the measured values to within a factor of 2 for x = 0.6 and 0.4, whereas for x = 0.2, 0.8, and 1.0 the agreement is within a factor of 1.4. © 1974 American Institute of Physics.
About the journal
JournalJournal of Applied Physics
PublisherAMER INST PHYSICS
ISSN0021-8979