Electron mobility in semiconducting Hg1-xCdxTe at room temperature has been calculated in the range 0.2 ≤ x ≤ 1.0 by an iterative solution of the Boltzmann equation incorporating the two-mode nature of the polar optical scattering and the nonparabolicity of the conduction band. The effects of the deformation potential acoustic, ionized impurity, and electron-hole scattering have also been considered. The calculated results agree with the measured values to within a factor of 2 for x = 0.6 and 0.4, whereas for x = 0.2, 0.8, and 1.0 the agreement is within a factor of 1.4. © 1974 American Institute of Physics.