Dilute nitride InAsN epitaxial layers were produced using both liquid phase and molecular beam epitaxial growth techniques. The spectral features in the photoluminescence of samples containing up to 1% N with emission energies in the mid-infrared spectral region are described and compared. The emission intensities of both LPE and MBE grown materials were found to be comparable. Increasing the N content in the InAsN alloys resulted in a significant increase in the activation energy for thermal quenching of the photoluminescence emission due to a combination of lowering of the conduction band edge and Auger de-tuning. (c) 2012 Elsevier B.V. All rights reserved.