We review here our work on the growth of dilute GaAsN, GaSbN and InAsN epitaxial layers using a novel liquid phase epitaxy technique, first developed by us. The growth melt for these materials were preapared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively. The nitrogen content in the grown materials was obtained through various characterization techniques, namely, energy dispersive X-rays, high resolution X-ray diffraction, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. Nitrogen-induced deep levels in some materials have been identified and investigated. © 2007 IEEE.

S DHAR

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Investigation of some group III-V dilute nitride materials grown by liquid phase epitaxy

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Dilute GaAsN layers are grown by liquid phase epitaxy (LPE) technique, using polycrystalline GaN as the source of nitrogen. A band gap lowering of 100 meV is obtained from low temperature photoluminescence (PL) measurements which correspond to a little more than 0.5% nitrogen in the layer. Using 10 K photocapacitance measurements, a 0.7 eV electron trap is detected in the material which is assigned to an interstitial (N-N)As defect. Annealing of the material at 750 °C for 1 h greatly reduced this trap and new electron traps with activation energies of 0.8 and 0.9 eV are detected. These new traps are suggested to be due to individual nitrogen-related defect complexes, produced by the thermal annihilation of the N-N bond. After a high temperature treatment of the GaAsN growth melt with 0.1 wt.% Er, nitrogen is found to be removed from the layer and no electron trap was detected. © 2006 Elsevier B.V. All rights reserved.

Thin Solid Films

Investigation of deep level traps in dilute GaAsN layers grown by liquid phase epitaxy

Dilute GaAsN layers are grown by liquid phase epitaxy from saturated melts containing polycrystalline GaN as the source of nitrogen. From photoluminescence measurements the nitrogen content in the material is obtained. Low temperature photocurrent and photocapacitance measurements reveal the presence of an electron trap with an ionization energy of 0.65-0.67 eV in the as-grown layers, whose origin is related to interstitial (N-N)As defects. High temperature annealing of the material almost removed the trap and new electron traps at 0.8 and 0.9 eV are produced. It is suggested that during the annealing process the (N-N)As defects, due to their lower energy of formation, are converted to more thermally stable (AsGa-NAs) or (AsN)As defects which might be the source of the new electron traps. High temperature treatment of the growth melt with erbium is found to remove nitrogen from the grown layer with complete annihilation of all the electron traps. © 2005 IOP Publishing Ltd.

Fulltext

Semiconductor Science and Technology

Detailed studies on the origin of nitrogen-related electron traps in dilute GaAsN layers grown by liquid phase epitaxy

The growth of dilute GaAsN layers using polycrystalline GaN as the source of nitrogen was studied using liquid phase epitaxy (LPE) technique. Investigations show a band-gap reduction of 90 meV due to the optical transmission and photocurrent technique. An electron trap of 0.07 eV was found in the material originated due to the nitrogen. The results show that the growth of electron trap was tentatively related to (N-N) defects at As sites.

Journal	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Publisher	-