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Influence of built-in potential on the effective surface recombination velocity for a heavily doped high-low junction
S S DE, A K GHOSH, M BERA, A HAJRA, J C HALDAR
Published in Elsevier
1996
Volume: 228
   
Issue: 43528
Pages: 363 - 368
Abstract
An analytical expression for the built-in potential in a heavily doped high-low (p+-p) junction has been derived. The magnitude of built-in potential at different values of dopant density is estimated numerically. Band gap narrowing, carrier degeneracy, dopant density-dependent dielectric constant and also effects of carrier lifetime across the junction are considered in the analysis. The variation of surface recombination velocity with dopant density has been shown graphically through numerical analysis, where the variation of built-in potentials is incorporated.
About the journal
JournalData powered by TypesetPhysica B: Condensed Matter
PublisherData powered by TypesetElsevier
ISSN0921-4526