A S SHARMA

S DHAR

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Materials Research Express

We have investigated the influence of Pb vs Ga solvents during the liquid phase epitaxial growth of GaSbBi layers on the overall physical, optical, and electrical properties of the material. 10 K photoluminescence (PL) measurements show narrower PL linewidths in layers grown from the Pb solvent compared to that obtained for layers grown under similar conditions using Ga as the solvent. This is an indication of the improved crystalline quality of the material grown from the Pb solvent. GaSbBi layers grown from Pb solvents show a reduction of the carrier concentration by over one order of magnitude than that measured in the corresponding materials grown from Ga solvents. Detailed analysis of the core level transitions, revealed by X-ray photoelectron spectroscopy, indicates the generation of a lesser number of VGa and antisite GaSb defects responsible for the residual hole concentration in GaSb and GaSbBi layers grown from Pb solvents than in the same materials grown using Ga as the solvent. This is suggested as the main reason for the observed reduction of carrier concentration in the layers grown from the Pb solvent. © 2019 Author(s).

Journal of Applied Physics

Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers

We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 0 0) substrates and PL is obtained in the near infrared spectral range (λ ∼ 1.6 μm). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. © 2011 Elsevier B.V. All rights reserved.

Infrared Physics and Technology

Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

Semiconductor Science and Technology

Temperature dependence of band gaps in dilute bismides

Applied Physics Letters

GaSbBi/GaSb quantum well laser diodes

Nanotechnology

GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

Applied Physics Express

Low- and high-energy photoluminescence from GaSb1−xBixwith 0 <x≤ 0.042

Influence of Bi on the temperature dependent fundamental band gap parameters of GaSb 1-x Bi x

Journal	Materials Research Express
Publisher	Institute of Physics Publishing
ISSN	2053-1591