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Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors
A N CHAKRAVARTI, A K CHOWDHURY, K P GHATAK, D R CHOUDHURY
Published in Kluwer Academic Publishers
1980
Volume: 30
   
Issue: 10
Pages: 1161 - 1166
Abstract
An expression is derived for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands. The dependence of the ratio on alloy composition is also studied under the weak-field limit taking n-channel Hg1-xCdx.Te as an example. © 1980 Academia, Publishing House of the Czechoslovak Academy of Sciences.
About the journal
JournalCzechoslovak Journal of Physics
PublisherKluwer Academic Publishers
ISSN0011-4626