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Improved electrical and interfacial properties of RF-sputtered HfAlO x on n-GaAs with effective Si passivation
Published in Elsevier B.V.
Volume: 256
Issue: 22
Pages: 6618 - 6625
In this paper, we present the effects of ultrathin Si interfacial layer on the physical and electrical properties of GaAs MOS capacitors fabricated using RF-sputtered HfAlO x gate dielectric. It is found that HfAlO x /Si/n-GaAs stack exhibits excellent electrical properties with low frequency dispersion (∼4.8%), hysteresis voltage (0.27 V) and interface trap density (1.3 × 10 12 eV -1 cm -2 ). The current density of 3.7 × 10 -5 A/cm 2 is achieved with an equivalent-oxide-thickness of 1.8 nm at V FB + 1 V for Si-passivated HfAlO x films on n-GaAs. X-ray photoelectron spectroscopy (XPS) analysis shows that the suppression of low-k interfacial layer formation is accomplished with the introduction of ultrathin Si interface control layer (ICL). Thus the introduction of thin layer of Si between HfAlO x dielectrics and GaAs substrate is an effective way to improve the interface quality such as low frequency dispersion, hysteresis voltage and leakage current. Additionally, current conduction mechanism has been studied and the dominant conduction mechanisms are found to be Schottky emission at low to medium electric fields and Poole-Frenkel at high fields and high temperatures under substrate injection. In case of gate injection, the main current conduction at low field is found to be the Schottky emission at high temperatures. © 2010 Elsevier B.V.
About the journal
JournalData powered by TypesetApplied Surface Science
PublisherData powered by TypesetElsevier B.V.
Open AccessNo