The mathematical formulations of extrinsic resistances of a SiC-MESFET are developed and their impact on the electrical characteristics of the device has been studied in this work. Numerical techniques are used to calculate the drain current of a MESFET considering the existence of parasitic resistances. The analytical expressions of drain conductance, mutual conductance and cut off frequency of the device have been derived and their variations over different device parameters are studied incorporating the effect of extrinsic resistances. It is observed that the impact of parasitic resistances on the drain current and other parameters of the device is significant and device performance usually degrades with parasitic resistances. The parasitic resistances computed using our approach is compared with the experimentally extracted data reported earlier and a reasonably good agreement has been observed. © 2017 Elsevier Ltd

S DUTTA

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

&nbsp;

The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

&nbsp;

It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Superlattices and Microstructures

This theoretical study includes the impact of ambient temperature fluctuations on the drain current of a SiC MESFET considering two field regions under the gate at a considerably high drain field. The variations of drain current of the device with ambient temperature are studied and the sensitivity of the device with temperature is calculated. An analytical expression of temperature sensitivity of the device is derived for a MESFET operating under the two region model. The variations of device sensitivity with temperature are presented for different gate length and applied biases. The results show that the linearity of drain current over ambient thermal variation improves for proper biasing conditions of gate and drain terminals and selection of appropriate gate length. Moreover, an effort has been made to compare our work with an experimentally observed data reported earlier. © 2016 Elsevier Ltd

A theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application

International Journal of Electronics Letters

Frequency performance of a SiC MESFET with a moderately doped buffer layer

Journal of Semiconductors

An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

IEEE Transactions on Electron Devices

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Impact of parasitic resistances on the electrical characteristics of a SiC MESFET

Journal	Superlattices and Microstructures
Publisher	Academic Press
ISSN	0749-6036