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Impact of aspect ratio of nanoscale hybrid p-Ge/n-Si complementary FinFETs on the logic performance
Published in Springer Verlag
Volume: 26
Issue: 10
Pages: 1 - 8
We investigate the effect of aspect ratio (AR) with a given fin width (Wfin) of hybrid FinFETs at channel length of 20 nm on their digital performance using extensive numerical device and circuit simulations. The hybrid complementary FinFETs (HCFF), consist of Si channel n-FinFETs and Ge channel p-FinFETs and the performance is gauged in terms of device gain, noise margins (NMs), rise time (tr), fall time (tf) and propagation delay (td). Our findings reveal that tr and NM for our proposed HCFF inverter exhibit significant improvements of 37.31 and 8.03% compared to its corresponding Si value at aspect ratio of 5. Furthermore, the frequency of oscillations (fosc) of a nine-stage ring oscillator built using HCFF inverters shows 95.17% improvement with respect to that obtained with its equivalent Si counterpart at AR = 5 and supply voltage = 0.5 V. © 2017 Springer-Verlag GmbH Germany, part of Springer Nature
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JournalData powered by TypesetMicrosystem Technologies
PublisherData powered by TypesetSpringer Verlag
Open AccessNo