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Hot-electron velocity overshoot in Ga0.47In0.53As
A GHOSAL, , N N PURKAIT
Published in AMER INST PHYSICS
1984
Volume: 44
   
Issue: 8
Pages: 773 - 774
Abstract
Velocity overshoot phenomena in Ga0.47In0.53As to the application of uniform electric fields are investigated using recent values of the material parameters. The effects of the ambient temperature and of the doping concentration are studied. The material is found to yield peak drift velocities larger than those in GaAs. The values of the peak velocity are greater for short lengths of the active region, low impurity concentration, and low ambient temperatures.
About the journal
JournalApplied Physics Letters
PublisherAMER INST PHYSICS
ISSN0003-6951
Open AccessNo