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Hot-electron velocity overshoot in Ga0.47In0.53AsPublished in AMER INST PHYSICS
1984
DOI: 10.1063/1.94913
Volume: 44
Issue: 8
Pages: 773 - 774
Velocity overshoot phenomena in Ga0.47In0.53As to the application of uniform electric fields are investigated using recent values of the material parameters. The effects of the ambient temperature and of the doping concentration are studied. The material is found to yield peak drift velocities larger than those in GaAs. The values of the peak velocity are greater for short lengths of the active region, low impurity concentration, and low ambient temperatures.
Topics: Velocity overshoot (65)%65% related to the paper and Electron mobility (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Hot?electron velocity overshoot in Ga0.47In0.53As. Applied Physics Letters 44, 8 p773-774 (1984)] and may be found at https://doi.org/10.1063/1.94913.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| Publisher | AMER INST PHYSICS |
| ISSN | 0003-6951 |
| Open Access | No |
Authors (1)
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