The hot-carrier microwave conductivity characteristics of the elemental semiconductors are reviewed. Significant features of the microwave incremental conductivity and also of the high-field microwave conductivity are critically analysed. These features are explained from simple physical considerations. Comparison is then made between the detailed theories and the experimental results. It is shown that most of the features of the microwave conductivity characteristics agree with those expected from theory. Some of the finer details of the characteristics which require further investigations are also indicated. © 1968.

B R NAG

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Hot-carrier microwave conductivity of elemental semiconductors

Solid State Electronics

Hot carrier d.c. conduction characteristics of the elemental semiconductors, germanium and silicon, are reviewed. The experimental results on the conduction and anisotropy characteristics have been collected from different sources and compared to determine the consistency of the data. The general features of the results are then described. The principles and basic assumptions on which the theories of hot carrier conduction have been developed are outlined. The experimental results are then examined in the light of the theories and the agreements and discrepancies are pointed out. Some studies which are required for the clarification and the elucidation of the results are also suggested. © 1967.

Hot-carrier d.c. conduction in elemental semiconductors

Microwave conduction in n-type germanium in the presence of a high steady electric field is studied The carrier concentration is assumed to be high enough to ensure that intercarrier collisions enforce a Maxwellian distribution on the carriers and the momentum loss by the carriers occurs mainly through scattering due to lattice vibrations. The effect of anisotropic effective mass on the microwave conduction characteristics is discussed, and the anisotropy is found to be small at room temperature Numerical values of microwave conductivity and the change in dielectric constant are found to agree with the experimental results of a 4 68 Ω cm n-type germanium sample, and the best fit with the experimental characteristics is obtained for a value of the optical deformation potential constant D0 between 0 7 to 0 8 × 109 ev cm-1.

Proceedings of the Physical Society

Microwave conduction in n-type germanium under hot electron conditions

The anisotropy character of the microwave conductivity of a many-valley semiconductor in the presence of a high dc field is discussed. The propagation of microwave signals through this anisotropic medium is briefly studied and a microwave experiment is suggested for determining the elements of the conductivity tensor. It is shown that an analysis of the data obtainable from the experiment would enable one to find out whether the A100 valleys in n-type germanium are populated under hot-electron conditions. It is also shown that if the A100 valleys are found to be insignificantly populated, one may determine the anisotropy factor K and the carrier population in the different A111 valleys from these data. © 1966 The American Physical Society.

Physical Review

Hot carrier concentration in n-type germanium -a suggested experiment

British Journal of Applied Physics

Hot carrier a.c. conductivity and harmonic generation in semiconductors

The distribution function of carriers in a semiconductor when subjected to a small microwave field and a high steady electric field is derived, considering both the acoustic and optical phonon scattering. Expressions for microwave conductivity and change in apparent dielectric constant are obtained from the distribution function. It is shown by numerical calculations that the conductivity evaluated from these expressions agree closely with the experimental value. The calculated value of the change in apparent dielectric constant, however, is found to be of the same order as the experimental value, but the agreement is poorer than that for the conductivity. © 1963 The American Physical Society.

Journal	Solid State Electronics
Publisher	-
ISSN	0038-1101